Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bonding
authors: Iacovo, Serena; Peng, Lan; Nagano, Fuya; Uhrmann, Thomas; Burggraf, Jürgen; Fehkührer, Andreas; Conard, Thierry; Inoue, Fumihiro; Kim, Soon-Wook; De Vos, Joeri;
publication: 2021 IEEE 71st Electronic Components and Technology Conference (ECTC)
pages: 2097-2104
year: 2021
Electrochemical Deposition of Sn-Cu Alloys for Applications in 3D Stacking in Microelectronics Industry
authors: Inoue, Fumihiro; El-Mekki, Zaid; Struyf, Herbert; Hou, Lin; Derakhshandeh, Jaber; Beyne, Eric; Radisic, Aleksandar; Hsia, Chih-Hao; Chang, Iris; Kuttner, Elisabeth;
publication: ECS Meeting Abstracts
number: 20
pages: 1235
year: 2020
10 and 7 μm Pitch Thermo-compression Solder Joint, Using A Novel Solder Pillar And Metal Spacer Process
authors: Derakhshandeh, Jaber; Capuz, Giovanni; Cherman, Vladimir; Inoue, Fumihiro; De Preter, Inge; Hou, Lin; Bex, Pieter; Gerets, Carine; Duval, Fabrice; Webers, Tomas;
publication: 2020 IEEE 70th Electronic Components and Technology Conference (ECTC)
pages: 617-622
year: 2020
Morphological characterization and mechanical behavior by dicing and thinning on direct bonded Si wafer
authors: Inoue, Fumihiro; Podpod, Arnita; Peng, Lan; Phommahaxay, Alain; Rebibis, Kenneth June; Uedono, Akira; Beyne, Eric;
publication: Journal of Manufacturing Processes
volume: 58
pages: 811-818
year: 2020
Characterization of Silicon Carbon Nitride for Low Temperature Wafer-to-Wafer Direct Bonding
authors: Nagano, Fuya; Iacovo, Serena; Phommahaxay, Alain; Inoue, Fumihiro; Sleeckx, Erik; De Gendt, Stefan; Beyer, Gerald; Beyne, Eric;
publication: ECS Transactions
volume: 98
number: 4
pages: 21
year: 2020
Electrodeposition for Die-to-Wafer Very High-Density Interconnect
authorsInoue, Fumihiro;
publicationECS Meeting Abstracts
number25
pages1786
year2020
Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications
authors: Nagano, F; Iacovo, S; Phommahaxay, A; Inoue, F; Sleeckx, E; Beyer, G; Beyne, E; Gendt, S De;
publication: ECS Journal of Solid State Science and Technology
volume: 9
number: 12
pages: 123011
year: 2020
Pre-bonding Characterization of SiCN Enabled Wafer Stacking
authors: Peng, Lan; Kim, Soon-Wook; Iacovo, Serena; Inoue, Fumihiro; De Vos, Joeri; Sleeckx, Erik; Miller, Andy; Beyer, Gerald; Beyne, Eric;
publication: 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
pages: 14-14
year: 2019
Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy
authors: Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric;
publication: 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
pages: 15-15
year: 2019
Influence of composition of SiCN as interfacial layer on plasma activated direct bonding
authors: Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Phommahaxay, Alain; Verdonck, Patrick; Meersschaut, Johan; Dara, Praveen; Sleeckx, Erik; Miller, Andy; Beyer, Gerald;
publication: ECS Journal of Solid State Science and Technology
volume: 8
number: 6
pages: P346
year: 2019