Self-Activated Direct Bonding with a Highly Polar Atomic-Layer-Deposited Film for 3D Integration
authors: Kitagawa, Hayato; Yamamoto, Taisuke; Lee, Jenyu; Machida, Shuntaro; Yuasa, Kazuhiro; Myalitsin, Anton; Inoue, Fumihiro;
publication: ACS Applied Materials & Interfaces
year: 2026
Surface Chemistry Effects on Bond Wave Dynamics and Distortion-Induced Scaling Errors during Plasma-Activated Direct Bonding of SiCN
authors: Sato, Ryosuke; Nagata, Atsushi; Ogata, Ryota; Kim, Youngjun; Kim, Haeri; Shin, Jong Han; Myalitsin, Anton; Inoue, Fumihiro;
publication: ACS Applied Electronic Materials
year: 2026
DOI: 10.1021/acsaelm.6c00446
Assessment of the Indium Chemical Mechanical Polishing Mechanism via Corrosion Analysis
authors: La, Mai Thi Ngoc; Otake, Yugi; Inoue, Fumihiro;
publication: Journal of The Electrochemical Society
year: 2026
DOI: 10.1149/1945-7111/ae3ee4
Degradation Mechanisms in Die-to-Wafer Hybrid Bonding Governed by Surface Activation Lifetime and Moisture Evaporation
authors: Yoshihara, Yuki; Mihara, Kentaro; Aoki, Shimpei; Hare, Takashi; Yamamoto, Naoko; Teranishi, Shunsuke; Fukushima, Takafumi; Uedono, Akira; Inoue, Fumihiro;
publication: IEEE Transactions on Components, Packaging and Manufacturing Technology
year: 2025
DOI: 10.1109/TCPMT.2025.3636933
Defects in Plasma-Activated Amorphous SiO2 Probed Using Positron Annihilation Spectroscopy
authors: Uedono, Akira; Hasunuma, Ryu; Kitagawa, Hayato; Yoshihara, Yuki; Inoue, Fumihiro; Mihara, Kentaro; Aoki, Shimpei; Hare, Takashi; Mori, Kiyoharu; Murugesan, Mariappan;
publication: ACS Applied Electronic Materials
year: 2025
DOI: 10.1021/acsaelm.5c01992
Indium Deposition on Copper and Ruthenium Seed Layers with Distinct Electrochemical and Microstructural Behaviors
authors: La, Mai Thi Ngoc; Otake, Yugi; Goundar, Jowesh Avisheik; Inoue, Fumihiro;
publication: Journal of The Electrochemical Society
year: 2025
DOI: 10.1149/1945-7111/ae1ea6
Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration
authors: Hayato Kitagawa, Ryosuke Sato, Sodai Ebiko, Atsushi Nagata, Chiwoo Ahn, Yeounsoo Kim, Jiho Kang, Akira Uedono, Fumihiro Inoue
publication: ACS Omega
year: 2025
DOI: https://doi.org/10.1021/acsomega.5c03628
Factors determining bond wave speed in wafer bonding
authors: Sato, Ryosuke; Nagata, Atsushi; Kitagawa, Hayato; Ogata, Ryota; Myalitsin, Anton; Inoue, Fumihiro;
publication: Japanese Journal of Applied Physics
year: 2025
DOI: https://doi.org/10.35848/1347-4065/adbafc
Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams
authors: Uedono, Akira; Hasunuma, Ryu; Onishi, Koki; Kitagawa, Hayato; Inoue, Fumihiro; Michishio, Koji; Oshima, Nagayasu;
publication: Journal of Applied Physics
volume:136
number:4
year:2024
publisher:AIP Publishing
DOI:https://doi.org/10.1063/5.0217760
Water stress corrosion at wafer bonding interface during bond strength evaluation
authors: Iwata, Tomoya; Fuse, Junya; Yoshihara, Yuki; Kondo, Yusuke; Sano, Marie; Inoue, Fumihiro;
publication: Materials Science in Semiconductor Processing
volume:184
pages:108820
year: 2024
publisher:Pergamon
DOI:https://doi.org/10.1016/j.mssp.2024.108820