Factors determining bond wave speed in wafer bonding
authors:Sato, Ryosuke; Nagata, Atsushi; Kitagawa, Hayato; Ogata, Ryota; Myalitsin, Anton; Inoue, Fumihiro;
publication:Japanese Journal of Applied Physics
year:2025
DOE:https://doi.org/10.35848/1347-4065/adbafc
Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams
authors: Uedono, Akira; Hasunuma, Ryu; Onishi, Koki; Kitagawa, Hayato; Inoue, Fumihiro; Michishio, Koji; Oshima, Nagayasu;
publication: Journal of Applied Physics
volume:136
number:4
year:2024
publisher:AIP Publishing
DOE:https://doi.org/10.1063/5.0217760
Water stress corrosion at wafer bonding interface during bond strength evaluation
authors: Iwata, Tomoya; Fuse, Junya; Yoshihara, Yuki; Kondo, Yusuke; Sano, Marie; Inoue, Fumihiro;
publication: Materials Science in Semiconductor Processing
volume:184
pages:108820
year: 2024
publisher:Pergamon
DOE:https://doi.org/10.1016/j.mssp.2024.108820
Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps
authors: Nakayama, Kohei; Hayama, Kenta; Tanaka, Fabiana Lie; La, Mai Thi Ngoc; Inoue, Fumihiro;
publication: ECS Journal of Solid State Science and Technology
year: 2024
DOI: 10.1149/2162-8777/ad5fb7
Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams
authors:Uedono, Akira; Hasunuma, Ryu; Onishi, Koki; Kitagawa, Hayato; Inoue, Fumihiro; Michishio, Koji; Oshima, Nagayasu;
publication: Journal of Applied Physics
Volume: 136
Number: 4
year: 2024
Publisher: AIP Publishing
DOI: https://doi.org/10.1063/5.0217760
D2W Hybrid Bonding System Achieving High-Accuracy and High-Throughput With Minimal Configurations
authors: Mihara, Kentaro; Hare, Takashi; Sakai, Hirofumi; Aoki, Shimpei; Terada, Toyoharu; Murugesan, Mariappan; Hashimoto, Hiryuki; Kino, Hisashi; Tanaka, Tetsu; Fukushima, Takafumi;
publication: 2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
Pages: 420-426
year: 2024
Publisher: IEEE
DOI: https://doi.org/10.1109/ECTC51529.2024.00074
Low Temperature Wafer Level Hybrid Bonding Enabled by Advanced SiCN and Surface Activation
authors:Inoue, Fumihiro; Nagata, Atsushi; Fuse, Junya; Ebiko, Sodai; Sato, Ryosuke; Saito, Kenichi; Kondo, Yoshihiro; Kawauchi, Takuo; Park, Junghwan; Ahn, Chiwoo;
publication: 2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
Pages: 69-75
year: 2024
Publisher: IEEE
DOI: https://doi.org/10.1109/ECTC51529.2024.00020
Exploring Bonding Mechanism of SiCN for Hybrid Bonding
authors:Ebiko, Sodai; Iacovo, Serena; Chew, Soon-Aik; Zhang, Boyao; Uedono, Akira; Inoue, Fumihiro;
publication: 2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
Pages: 1953-1957
year: 2024
Publisher: IEEE
Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications
authors: Onishi, Koki; Kitagawa, Hayato; Teranishi, Shunsuke; Uedono, Akira; Inoue, Fumihiro;
publication: ACS Applied Electronic Materials
Volume: 6
Number: 4
Pages: 2449-2456
year: 2024
Publisher: American Chemical Society
Inorganic temporary direct bonding for collective die to wafer hybrid bonding
authors: Inoue, Fumihiro; Teranishi, Shunsuke; Iwata, Tomoya; Onishi, Koki; Yamamoto, Naoko; Kawai, Akihito; Aoki, Shimpei; Hare, Takashi; Uedono, Akira;
publication: 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
Pages:556-563
Year: 2023
Publisher: IEEE