Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance
authors: Nagano, F; Inoue, F; Phommahaxay, A; Peng, L; Chancerel, F; Naser, H; Beyer, G; Uedono, A; Beyne, E; De Gendt, S;
publication: ECS Journal of Solid State Science and Technology
Volume: 12
Number: 3
Pages: 33002
Year: 2023
Publisher: IOP Publishing
DOI: 10.1149/2162-8777/acbe18